irfz34s/l hexfet ? power mosfet pd - 9.892a l advanced process technology l surface mount (irfz34s) l low-profile through-hole (IRFZ34L) l 175c operating temperature l fast switching v dss = 60v r ds(on) = 0.050 w i d = 30a 2 d pak to-262 s d g 8/25/97 parameter typ. max. units r q jc junction-to-case CCC 1.7 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 30 i d @ t c = 100c continuous drain current, v gs @ 10v ? 21 a i dm pulsed drain current ?? 120 p d @t a = 25c power dissipation 3.7 w p d @t c = 25c power dissipation 88 w linear derating factor 0.59 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 200 mj dv/dt peak diode recovery dv/dt ?? 4.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings description third generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRFZ34L) is available for low- profile applications. c
irfz34s/l ? v dd = 25v , starting t j = 25c, l = 260h r g = 25 w , i as = 30a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ** when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? i sd 30a, di/dt 200a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? uses irfz34 data and test conditions parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.6 v t j = 25c, i s = 30a, v gs = 0v ? t rr reverse recovery time CCC 120 230 ns t j = 25c, i f = 30a q rr reverse recovery charge CCC 700 1400 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.065 CCC v/c reference to 25c, i d =1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.05 w v gs =10v, i d = 18a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 9.3 CCC CCC s v ds = 25v, i d = 18a ? CCC CCC 25 a v ds = 60v, v gs = 0v CCC CCC 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 46 i d = 30a q gs gate-to-source charge CCC CCC 11 nc v ds = 48v q gd gate-to-drain ("miller") charge CCC CCC 22 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 13 CCC v dd = 30v t r rise time CCC 100 CCC i d = 30a t d(off) turn-off delay time CCC 29 CCC r g = 12 w t f fall time CCC 52 CCC r d = 1.0 w, see fig. 10 ? between lead, CCC CCC and center of die contact c iss input capacitance CCC 1200 CCC v gs = 0v c oss output capacitance CCC 600 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 100 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current nh 7.5 l s internal source inductance 30 120 s d g
irfz34s/l t j t j
irfz34s/l
irfz34s/l
irfz34s/l
irfz34s/l p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * fig 14. for n-channel hexfets
irfz34s/l d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) max. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignm ents 1 - g at e 2 - d r a in 3 - s ou rc e 2.54 (.100) 2x part number in ter nation al rectifier logo date code (yyww ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irfz34s/l package outline to-262 outline to-262 part marking information
irfz34s/l tape & reel information d 2 pak world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/97 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.0 69 ) 1.25 (.0 49 ) 11 .6 0 (.45 7 ) 11 .4 0 (.44 9 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 1 3.5 0 (.532 ) 1 2.8 0 (.504 ) 33 0.0 0 (14.17 3) m ax . 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 6 0.0 0 (2 .36 2) m in . 3 0.4 0 (1 .19 7) m a x . 26 .40 (1.03 9) 24.40 (.961) not es : 1. co mfo r ms to eia -418 . 2. co ntro llin g dim en sion : m illim eter . 3. dim ensio n m easured @ hub. 4. includes flange distortion @ outer edge.
|
